New theory of linewidths of radiative transitions due to disordering in semiconductor alloys
- 17 February 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (7), 853-855
- https://doi.org/10.1063/1.106509
Abstract
A quantum mechanical formalism for the excitonic photoluminescence linewidth in semiconductor alloys due to band gap fluctuations caused by the random distributions of alloy components is presented. Using a quantum mechanical description for the excitonic system, the mean deviation of its transition energy due to the statistical potential fluctuations is calculated using a first-order perturbation theory. We then apply this formalism to calculate the linewidth of the ground state excitonic transition as a function of composition. Specifically, the excitonic linewidth in AlxGa1−xAs alloy as a function of Al concentration is calculated and compared with earlier models and available low-temperature photoluminescence data.Keywords
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