Abstract
The modeling of the semiconductor devices and the need for simulation became currently very essential in power electronics. It permits at the same time to reduce the time and the development costs of the devices, as it makes thereafter to increase the reliability of the designed circuits. By the present article, we could prove the possibility to develop behavioral and electrothermal circuit models of the bipolar devices. These models, also simple, regarding the compromise precision-complexity and compatible with the electric circuits software's simulator.