Growth Condition Dependence of the Photoluminescence Properties of InxGa1-xN/InyGa1-yN Multiple Quantum Wells Grown by MOCVD
- 1 April 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (4S)
- https://doi.org/10.1143/jjap.38.2613
Abstract
In x Ga1-x N/In y Ga1-y N multiple quantum wells have been grown by atmospheric pressure metalorganic chemical vapour deposition and characterised by photoluminescence (PL) measurements. The influence of many different growth parameters has been systematically investigated. Use of a high ammonia flow rate and a moderate hydrogen flow rate are observed to be very important for obtaining samples of high indium content and high PL intensity. A low total gas flow rate is also found to be best, and the benefits of using low growth rate and high trimethylindium flow rate are confirmed. Room temperature PL linewidths as low as 64 meV have been achieved.This publication has 7 references indexed in Scilit:
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