X‐Ray Investigation of Lattice Deformations in Silicon Induced through High‐Energy Ion Implantation
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 33 (1), 361-374
- https://doi.org/10.1002/pssb.19690330134
Abstract
X-ray interference fringes observed in X-ray topographs of silicon crystals bombarded with high energy ions (dose > 1015 ions/cm2) are described. The X-ray fringes are used to analyze the deformation state of the crystal. It is shown that the bombarded crystal is a special kind of bicrystal composed of a thick perfect bulk crystal topped by a thin practically perfect layer crystal. Both crystals have the same crystallographic orientation and the same lattice constant but are separated by a small rigid body displacement. Contrast and geometry of the observed X-ray patterns agree with the theoretical patterns calculated by Bonse and Hart [1] on the basis of a layer/bulk bicrystal model, and are also supported through transmission electron microscopy results. The ion range calculated from the interference fringes is in good agreement with the experimentally determined range.Keywords
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