X-ray diffraction and ion backscattering study of thermally annealed Pd/SiC and Ni/SiC

Abstract

The reactions of Pd/SiC and Ni/SiC samples during thermal annealing are investigated by x-ray diffraction (Read camera) and MeV ion backscattering spectrometry. Metal rich silicides, Pd3Si and Ni31Si12, are found to form first, followed by the formation of Pd3Si and Ni2Si at consecutively high temperature annealing. The reaction temperatures of Pd/SiC and Ni/SiC samples are much higher compared to those of Pd/Si and Ni/Si samples. Carbon compounds were not detected in either the Pd/SiC or Ni/SiC systems within the temperature range investigated in this study.