X-ray attenuation coefficients and atomic photoelectric absorption cross sections of silicon
- 28 September 1981
- journal article
- Published by IOP Publishing in Journal of Physics B: Atomic and Molecular Physics
- Vol. 14 (18), 3389-3395
- https://doi.org/10.1088/0022-3700/14/18/011
Abstract
The X-ray linear attenuation coefficient of single-crystal silicon has been measured to within 0.5% using an energy dispersive method. Atomic photoelectric cross sections are derived from the experimental results and compared with theoretical calculations. Results are given for the Cu and Mo K lines.Keywords
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