Tunneling Field-Effect Transistor: Capacitance Components and Modeling
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- 17 May 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 31 (7), 752-754
- https://doi.org/10.1109/led.2010.2047240
Abstract
We report a numerical simulation study of gate capacitance components in a tunneling field-effect transistor (TFET), showing key differences in the partitioning of gate capacitance between the source and drain as compared with a MOSFET. A compact model for TFET capacitance components, including parasitic and inversion capacitances, was built and calibrated with computer-aided design data. This model should be useful for further investigation of performance of circuits containing TFETs. The dependence of gate-drain capacitance Cgd on drain design and gate length was further investigated for reduction of switching delay in TFETs.Keywords
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