Flat transistors get off the ground
- 4 March 2011
- journal article
- Published by Springer Science and Business Media LLC in Nature Nanotechnology
- Vol. 6 (3), 135-136
- https://doi.org/10.1038/nnano.2011.26
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Single-layer MoS2 transistorsNature Nanotechnology, 2011
- Graphene: Electronic and Photonic Properties and DevicesNano Letters, 2010
- High-speed graphene transistors with a self-aligned nanowire gateNature, 2010
- Graphene transistorsNature Nanotechnology, 2010
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper FoilsScience, 2009
- Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect TransistorsPhysical Review Letters, 2008
- The rise of grapheneNature Materials, 2007
- Two-dimensional atomic crystalsProceedings of the National Academy of Sciences of the United States of America, 2005
- Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based NanoelectronicsThe Journal of Physical Chemistry B, 2004