I-V and C-V characteristics of Au/TiO2 Schottky diodes
- 1 June 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (6), 3310-3312
- https://doi.org/10.1063/1.328037
Abstract
The electrical characteristics of Au/n‐TiO2Schottky diodes have been studied using I‐V and C‐V measurements. TiO2 samples with working face perpendicular to the c axis are reduced in a vacuum of 10−6 Torr at 800 °C for about 5 h and then quenched. The resistivities are in the range 20–30 Ω cm. The barrier heights deduced from I‐Vcharacteristics in agreement with the thermionic emission theory are in the range 0.87–0.94 eV. C‐V data yield lower barrier heights and show a frequency dependence attributed to relaxation phenomena occurring in a disturbed layer near the surface. Comparison with results relative to Au/n‐SrTiO3diodes shows that the barrier heights obey the Schottkymodel for these ionic semiconductors, confirming the role of the electron affinity in the band bending formation.Keywords
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