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Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO2 Gate Dielectric
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Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO2 Gate Dielectric
Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO2 Gate Dielectric
YK
Yoshiki Kamata
Yoshiki Kamata
YK
Yuuichi Kamimuta
Yuuichi Kamimuta
TI
Tsunehiro Ino
Tsunehiro Ino
RI
Ryosuke Iijima
Ryosuke Iijima
MK
Masato Koyama
Masato Koyama
AN
Akira Nishiyama
Akira Nishiyama
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1 January 2005
conference paper
conference paper
Published by
Japan Society of Applied Physics
https://doi.org/10.7567/ssdm.2005.a-9-1
Abstract
2005 International Conference on Solid State Devices and Materials,Search for presentations
Keywords
SOLID STATE
GATE DIELECTRIC
INTERNATIONAL CONFERENCE
STATE DEVICES
ZRO2 GATE
ACTIVATION ANNEALING
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Open Access
Cited by 3 articles