Interface stress of AlxGa1−xAs–GaAs layer structures
- 1 July 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (7), 3171-3175
- https://doi.org/10.1063/1.1662726
Abstract
It is shown that stresses caused at the interface of a AlxGa1−xAs–GaAs heteroboundary are due to the different thermal expansion coefficients of the two layers involved. These interface stresses are elastic and depend on the crystallographic orientation of the heteroboundary plane. Based on these experimental observations, a planar stress model for double heterostructure (DH) devices is developed which results in stress levels in the order of 108 dyn/cm2 for typical low‐threshold DH laser structures. It is demonstrated that this type of stress is responsible for the occasional preference of TM modes over the TE modes in DH lasers.Keywords
This publication has 13 references indexed in Scilit:
- Calculated elastic constants for stress problems associated with semiconductor devicesJournal of Applied Physics, 1973
- Efficient GaAs–AlxGa1−xAs Double-Heterostructure Light ModulatorsApplied Physics Letters, 1972
- Mode Reflectivity and Waveguide Properties of Double-Heterostructure Injection LasersJournal of Applied Physics, 1971
- GaAs–AlxGa1−xAs Double Heterostructure Injection LasersJournal of Applied Physics, 1971
- Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasersMetallurgical Transactions, 1971
- Thermal Expansion of AlAsJournal of Applied Physics, 1970
- Elastic Properties of ZnS Structure SemiconductorsPhysical Review B, 1970
- GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room TemperatureJournal of Applied Physics, 1970
- Photoelastic Properties of Selected Materials and Their Relevance for Applications to Acoustic Light Modulators and ScannersJournal of Applied Physics, 1967
- Analysis of Bi-Metal ThermostatsJournal of the Optical Society of America, 1925