Development of substrate integrated waveguide power dividers
- 3 June 2004
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 3, 1921-1924 vol.3
- https://doi.org/10.1109/ccece.2003.1226289
Abstract
Two classes of substrate integrated waveguide (SIW) power divider are presented, namely, Y- and T-types. Using arrays of via, the SIW power dividers and microstrip transitions are integrated on the same substrate. Design models are presented respectively for the Y- and T-junctions. Experimental results over the Ka band are given for both structures. The Y-junction shows a bandwidth of 25.2% at -18.5 dB while the T-junction shows a bandwidth of 10.2% at -19.0 dB.Keywords
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