Orientation dependence of mismatched InxAl1−xAs/In0.53Ga0.47As HFETs
- 1 May 1991
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 111 (1-4), 479-483
- https://doi.org/10.1016/0022-0248(91)91024-5
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Crosshatched surface morphology in strained III-V semiconductor filmsJournal of Applied Physics, 1990
- An all-electrical floating-gate transmission line model technique for measuring source resistance in heterostructure field-effect transistorsIEEE Transactions on Electron Devices, 1990
- Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth areaJournal of Applied Physics, 1989
- Anisotropic Transport in InGaAs/GaAs Heterostructures Grown by MovpeMRS Proceedings, 1989
- Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayersJournal of Applied Physics, 1988
- Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structuresApplied Physics Letters, 1988
- An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a heavily doped channelIEEE Electron Device Letters, 1987
- Asymmetry of misfit dislocations in heteroepitaxial layers on (001) GaAs substratesJournal of Crystal Growth, 1977
- Cathodoluminescence and electrical anisotropy from α and β dislocations in plastically deformed gallium arsenideJournal of Applied Physics, 1976
- Like-sign asymmetric dislocations in zinc-blende structureApplied Physics Letters, 1972