Seeded growth of GaN single crystals from solution at near atmospheric pressure
- 1 August 2008
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 310 (17), 3934-3940
- https://doi.org/10.1016/j.jcrysgro.2008.06.037
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Ammonothermal growth of GaN crystals in alkaline solutionsJournal of Crystal Growth, 2006
- The process of GaN single crystal growth by the Na flux method with Na vaporJournal of Crystal Growth, 2006
- Characterization of mass-transport grown GaN by hydride vapour-phase epitaxyJournal of Crystal Growth, 2004
- Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxyApplied Physics Letters, 2004
- Low dislocation density, high power InGaN laser diodesMRS Internet Journal of Nitride Semiconductor Research, 2004
- Thermodynamics and Phase Stability in the Ga–N SystemJournal of Crystal Growth, 2003
- Growth and characterization of freestanding GaN substratesJournal of Crystal Growth, 2001
- Modulated growth of thick GaN with hydride vapor phase epitaxyJournal of Crystal Growth, 2001
- Growth of GaN Single Crystals under High Nitrogen Pressures and their CharacterizationCrystal Research and Technology, 1999
- Equilibrium pressure of N2 over GaN and high pressure solution growth of GaNJournal of Crystal Growth, 1984