Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays
- 19 September 2002
- journal article
- Published by Elsevier BV in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 505 (3), 645-655
- https://doi.org/10.1016/s0168-9002(02)01558-9
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Epitaxial silicon carbide for X-ray detectionIEEE Transactions on Nuclear Science, 2001
- Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky DiodesMaterials Science Forum, 2001
- Proton Irradiation Induced Defects in 4H-SiCMaterials Science Forum, 2001
- EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiCMaterials Science Forum, 2001
- EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiCMaterials Science Forum, 2001
- Simultaneous measurement of neutron and gamma-ray radiation levels from a TRIGA reactor core using silicon carbide semiconductor detectorsIEEE Transactions on Nuclear Science, 1999
- Demonstration of an SiC neutron detector for high-radiation environmentsIEEE Transactions on Electron Devices, 1999
- Development of a silicon carbide radiation detectorIEEE Transactions on Nuclear Science, 1998
- Improved performance of GaAs radiation detectors with low ohmic contactsIEEE Transactions on Nuclear Science, 1997
- Investigations on Damage of GaAs Detectors caused by Neutrons (Peak Energy 1 MeV) and Co60 PhotonsNuclear Physics B - Proceedings Supplements, 1995