Edge states of epitaxially grown graphene on 4H-SiC(0001) studied by scanning tunneling microscopy
- 2 February 2010
- journal article
- Published by Springer Science and Business Media LLC in Zeitschrift für Physik B Condensed Matter
- Vol. 75 (1), 31-35
- https://doi.org/10.1140/epjb/e2010-00044-3
Abstract
The edge properties of single layer graphene epitaxially grown on partially graphitized 4H-SiC(0001) surface have been investigated with scanning tunneling microscopy (STM). We directly observed the atomic-structure dependency of the super structures in the vicinity of armchair and zigzag edges due to the different kinds of symmetry-breaking at those two edges.Keywords
This publication has 25 references indexed in Scilit:
- Theory of Interedge Superexchange in Zigzag Edge MagnetismPhysical Review Letters, 2009
- Rashba spin-orbit interaction in graphene and zigzag nanoribbonsPhysical Review B, 2009
- Field effects on the electronic and spin properties of undoped and doped graphene nanodotsPhysical Review B, 2008
- Electron-electron interactions and charging effects in graphene quantum dotsPhysical Review B, 2008
- Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube capsPhysical Review B, 2006
- Two-dimensional gas of massless Dirac fermions in grapheneNature, 2005
- Experimental observation of the quantum Hall effect and Berry's phase in grapheneNature, 2005
- Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based NanoelectronicsThe Journal of Physical Chemistry B, 2004
- Electric Field Effect in Atomically Thin Carbon FilmsScience, 2004
- Peculiar Localized State at Zigzag Graphite EdgeJournal of the Physics Society Japan, 1996