A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursors
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- 13 May 2010
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 43 (21)
- https://doi.org/10.1088/0022-3727/43/21/215403
Abstract
Thin films of Cu2SnS3 and Cu3SnS4 were grown by sulfurization of dc magnetron sputtered Sn–Cu metallic precursors in a S2 atmosphere. Different maximum sulfurization temperatures were tested which allowed the study of the Cu2SnS3 phase changes. For a temperature of 350 °C the films were composed of tetragonal (I-42m) Cu2SnS3. The films sulfurized at a maximum temperature of 400 °C presented a cubic (F-43m) Cu2SnS3 phase. On increasing the temperature up to 520 °C, the Sn content of the layer decreased and orthorhombic (Pmn21) Cu3SnS4 was formed. The phase identification and structural analysis were performed using x-ray diffraction (XRD) and electron backscattered diffraction (EBSD) analysis. Raman scattering analysis was also performed and a comparison with XRD and EBSD data allowed the assignment of peaks at 336 and 351 cm−1 for tetragonal Cu2SnS3, 303 and 355 cm−1 for cubic Cu2SnS3, and 318, 348 and 295 cm−1 for the Cu3SnS4 phase. Compositional analysis was done using energy dispersive spectroscopy and induced coupled plasma analysis. Scanning electron microscopy was used to study the morphology of the layers. Transmittance and reflectance measurements permitted the estimation of absorbance and band gap. These ternary compounds present a high absorbance value close to 104 cm−1. The estimated band gap energy was 1.35 eV for tetragonal (I-42m) Cu2SnS3, 0.96 eV for cubic (F-43m) Cu2SnS3 and 1.60 eV for orthorhombic (Pmn21) Cu3SnS4. A hot point probe was used for the determination of semiconductor conductivity type. The results show that all the samples are p-type semiconductors. A four-point probe was used to obtain the resistivity of these samples. The resistivities for tetragonal Cu2SnS3, cubic Cu2SnS3 and orthorhombic (Pmn21) Cu3SnS4 are 4.59 × 10−2 Ω cm, 1.26 × 10−2 Ω cm, 7.40 × 10−4 Ω cm, respectively.This publication has 14 references indexed in Scilit:
- In‐situ XRD on formation reactions of Cu2ZnSnS4 thin filmsphysica status solidi (c), 2009
- Structural and optical properties of Cu2SnS3 sprayed thin filmsThin Solid Films, 2008
- Growth and Raman scattering characterization of Cu2ZnSnS4 thin filmsThin Solid Films, 2008
- Enhanced Conversion Efficiencies of Cu2ZnSnS4-Based Thin Film Solar Cells by Using Preferential Etching TechniqueApplied Physics Express, 2008
- 19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factorProgress in Photovoltaics: Research and Applications, 2008
- Template-mediated growth of Cu3SnS4 nanoshell tubesJournal of Crystal Growth, 2005
- From 2D Framework to Quasi-1D Nanomaterial: Preparation, Characterization, and Formation Mechanism of Cu3SnS4 NanorodsInorganic Chemistry, 2002
- Synthesis, Characterization, and Properties of Nanocrystalline Cu2SnS3Journal of Solid State Chemistry, 2000
- Crystal structure and twinning of monoclinic Cu2SnS3Materials Research Bulletin, 2000
- Synthesis, Electrical Conductivity, and Crystal Structure of Cu4Sn7S16and Structure Refinement of Cu2SnS3Journal of Solid State Chemistry, 1998