Resistive switching via the converse magnetoelectric effect in ferromagnetic multilayers on ferroelectric substrates
- 29 October 2010
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 21 (47), 475202
- https://doi.org/10.1088/0957-4484/21/47/475202
Abstract
A voltage-controlled resistive switching is predicted for ferromagnetic multilayers and spin valves mechanically coupled to a ferroelectric substrate. The switching between low- and high-resistance states results from the strain-driven magnetization reorientations by about 90°, which are shown to occur in ferromagnetic layers with a high magnetostriction and weak cubic magnetocrystalline anisotropy. Such reorientations, not requiring external magnetic fields, can be realized experimentally by applying moderate electric field to a thick substrate (bulk or membrane type) made of a relaxor ferroelectric having ultrahigh piezoelectric coefficients. The proposed multiferroic hybrids exhibiting giant magnetoresistance may be employed as electric-write nonvolatile magnetic memory cells with nondestructive readout.Keywords
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