A 25-nm gate-length FinFET transistor module for 32nm node

Abstract

FinFET is the most promising double-gate transistor architecture to extend scaling over planar device. We present a high-performance and low-power FinFET module at 25 nm gate length. When normalized to the actual fin perimeter, N-FinFET and P-FinFET have 1200 and 915 ¿A/¿m drive current respectively at 100 nA/¿m leakage under 1V. To our knowledge this is the best FinFET drive current at such scaled gate length. This scaled gate length enables this FinFET transistor for 32 nm node insertion. With aggressive fin pitch scaling, the effective transistor width is approximately 1.9X and 2.7X over planar for typical logic and SRAM on the same layout area (i.e., silicon real estate). Due to superior electrostatics and reduced random dopant fluctuation, this high drive current can be readily traded with V _DD scaling for low power.