Improved performance of GaInN based deep green light emitting diodes through V‐defect reduction
- 13 May 2008
- journal article
- review article
- Published by Wiley in physica status solidi (c)
- Vol. 5 (6), 2207-2209
- https://doi.org/10.1002/pssc.200778566
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Misfit dislocations in In‐rich InGaN/GaN quantum well structuresPhysica Status Solidi (a), 2006
- Ga In N ∕ Ga N growth optimization for high-power green light-emitting diodesApplied Physics Letters, 2004
- Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN filmsApplied Physics Letters, 1998
- Phase separation in InGaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1998