A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz
- 19 December 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 16 (1), 22-24
- https://doi.org/10.1109/lmwc.2005.861355
Abstract
A single stage class-E power amplifier in GaN high electron mobility transistor (HEMT) technology is reported. The circuit operates at 1.9 GHz. At 30-V drain bias, a power-added-efficiency (PAE) of 57% and a maximum output power of over 37dBm was achieved, corresponding to a power density of 5.25W/mm. At 40-V drain bias, an output power of 38.7dBm is achieved at 50% PAE corresponding to a power density of 7.4W/mmKeywords
This publication has 7 references indexed in Scilit:
- 30-W/mm GaN HEMTs by Field Plate OptimizationIEEE Electron Device Letters, 2004
- Comparison of class-E amplifier with nonlinear and linear shunt capacitanceIEEE Transactions on Circuits and Systems I: Regular Papers, 2003
- Ultrahigh-efficiency power amplifier for space radar applicationsIEEE Journal of Solid-State Circuits, 2002
- A 700-MHz 1-W fully differential CMOS class-E power amplifierIEEE Journal of Solid-State Circuits, 2002
- A 900-MHz fully integrated SOI power amplifier for single-chip wireless transceiver applicationsIEEE Journal of Solid-State Circuits, 2000
- Low voltage, high efficiency GaAs Class E power amplifiers for wireless transmittersIEEE Journal of Solid-State Circuits, 1995
- Idealized operation of the class E tuned power amplifierIEEE Transactions on Circuits and Systems, 1977