Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes
- 14 March 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (12), 1516-1518
- https://doi.org/10.1063/1.126081
Abstract
An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal–oxide–silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrons and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction.Keywords
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