Oxidation of hydrogen-passivated silicon surfaces induced by dissociative electron attachment to physisorbed H2O
- 5 February 1996
- journal article
- Published by Elsevier BV in Surface Science
- Vol. 346 (1-3), L49-L54
- https://doi.org/10.1016/0039-6028(95)95066-4
Abstract
No abstract availableKeywords
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