High power-added efficiency MMIC amplifier for 2.4 GHz wireless communications
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 34 (1), 120-123
- https://doi.org/10.1109/4.736666
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A Theory for the Prediction of GaAs FET Load-Pull Power ContoursPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A high performance 2.4 GHz transceiver chip-set for high volume commercial applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A GaAs MMIC transceiver for 2.45 GHz wireless commercial productsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A single-chip MMIC transceiver for 2.4 GHz spread spectrum communicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Extracting a bias-dependent large signal MESFET model from pulsed I/V measurementsIEEE Transactions on Microwave Theory and Techniques, 1996
- A 90% power-added-efficiency GaInP/GaAs HBT for L-band radar and mobile communication systemsIEEE Microwave and Guided Wave Letters, 1996
- New horizons for the microwave business in EuropePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Design of high power-addecd efficiency FET amplifiers operating with very low drain bias voltages for use in mobile telephones at 1.7 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- A pulsed S-parameters measurement setup for the non-linear characterization of FETs and bipolar power transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993