Active‐to‐Passive Transition in the Oxidation of Silicon Carbide and Silicon Nitride in Air
- 1 June 1990
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 73 (6), 1540-1543
- https://doi.org/10.1111/j.1151-2916.1990.tb09793.x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Passive and Active Oxidation of Hot-Pressed Silicon Nitride Materials with Two Magnesia ContentsJournal of the American Ceramic Society, 1982
- Oxidation of Si3N4 in the Range 1300° to 1500°CJournal of the American Ceramic Society, 1976
- The Active Oxidation of Si and SiC in the Viscous Gas‐Flow RegimeJournal of the Electrochemical Society, 1976
- High-temperature kinetics of the oxidation and nitridation of pyrolytic silicon carbide in dissociated gasesThe Journal of Physical Chemistry, 1970
- The Oxidation of Silicon Carbide at 1150° to 1400°C and at 9 × 10[sup ?3] to 5 × 10[sup ?1] Torr Oxygen PressureJournal of the Electrochemical Society, 1966
- ENHANCEMENT OF DIFFUSION-LIMITED RATES OF VAPORIZATION OF METALSThe Journal of Physical Chemistry, 1963
- Passivity during the Oxidation of Silicon at Elevated TemperaturesJournal of Applied Physics, 1958