Schottky diodes using poly(3-hexylthiophene)

Abstract

Schottky barrierdiodes have been fabricated using poly(3‐hexylthiophene)(P3HT) as the semiconductor and indium as the metal. P3HT was doped with FeCl3 at room temperature to form a p‐type semiconductor. The Schottkyjunctions of In on FeCl3‐doped P3HT using pressure contact exhibit rectification ratios ranging from 104:1 to 106:1 at a bias of ±1 V.