Field-effect transistors on tetracene single crystals
- 24 November 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (21), 4345-4347
- https://doi.org/10.1063/1.1629144
Abstract
We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of 0.4 cm 2 / V s . The nonmonotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the sharpness of the subthreshold slope, confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality.Keywords
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