Passivation of HgCdTe p-n diode junction by compositionally graded HgCdTe formed by annealing in a Cd/Hg atmosphere
- 1 July 2002
- journal article
- research article
- Published by Springer Science and Business Media LLC in Journal of Electronic Materials
- Vol. 31 (7), 683-687
- https://doi.org/10.1007/s11664-002-0219-z
Abstract
No abstract availableKeywords
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