Gain characteristics and lasing of Ga(NAsP) multi‐quantum well structures
- 6 February 2009
- journal article
- review article
- Published by Wiley in physica status solidi (c)
- Vol. 6 (2), 576-578
- https://doi.org/10.1002/pssc.200880360
Abstract
Lasing is demonstrated for a Ga(NAsP) multi quantumwell structure grown pseudomorphically on GaP using metal‐organic vapour‐phase epitaxy. For a series of temperatures ranging from 8 K to 290 K, the sample emission characteristics are determined. With increasing pump power, a spectral narrowing of the emitted light along with a blue‐shift is observed as the lasing threshold is approached. Above the threshold, the emission splits up spectrally into a pattern of clearly distinguishable modes. In addition, the potential of this material concerning roomtemperature lasing is investigated by means of a variable stripe‐length experiment, where a modal gain of 10 cm–1 is observed.Keywords
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