Ultra-Thin Phase-Change Bridge Memory Device Using GeSb

1 December 2006

conference paper
conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 1-4
https://doi.org/10.1109/iedm.2006.346910

Abstract

An ultra-thin phase-change bridge (PCB) memory cell, implemented with doped GeSb, is shown with < 100muA RESET current. The device concept provides for simplified scaling to small cross-sectional area (60nm²) through ultra-thin (3nm) films; the doped GeSb phase-change material offers the potential for both fast crystallization and good data retention

Keywords

PHASE CHANGE MEMORY
TIN
BRIDGE CIRCUITS
ELECTRODES
PHASE CHANGE MATERIALS
PHASE CHANGE RANDOM ACCESS MEMORY
TESTING
RESISTS
LUNGS
CRYSTALLINE MATERIALS

This publication has 2 references indexed in Scilit:

Low-cost and nanoscale non-volatile memory concept for future silicon chips
Nature Materials, 2005
Te-free, Sb-based phase-change materials for high-speed rewritable optical recording
Applied Physics Letters, 2003

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