Sub-bandgap linear-absorption-based photodetectors in avalanche mode in PN-diode-integrated silicon microring resonators
- 27 November 2013
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 38 (23), 5200-5203
- https://doi.org/10.1364/ol.38.005200
Abstract
We report a sub-bandgap linear-absorption-based photodetector in avalanche mode at 1550 nm in a PN-diode-integrated silicon microring resonator. The photocurrent is primarily generated by the defect-state absorption introduced by the boron and phosphorous ion implantation during the PN diode formation. The responsivity is enhanced by both the cavity effect and the avalanche multiplication. We measure a responsivity of upon 8 V at cavity resonances in avalanche mode, corresponding to a gain of relative to the responsivity of upon 3 V at cavity resonances in normal mode. Our device exhibits a 3 dB bandwidth of and an open eye diagram at upon 8 V.
Keywords
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