Magnetic properties of patterned tunnel junctions
- 9 May 2003
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 93 (10), 7287-7289
- https://doi.org/10.1063/1.1557391
Abstract
Patterned magnetic tunnel junctions are being actively studied for their application in magnetic random access memory (MRAM) and read-heads. For MRAM application purposes, a clean magnetization reversal is one of the required properties. Various parameters such as junction size, shape or layer sequence are being investigated to optimize element properties. In this article, we report the results of Lorentztransmission electron microscopy used to study the magnetization reversal mechanism of ( Ta/NiFe/MnFe/NiFe/Al 2 O 3 / NiFeCo ) tunnel junction elements. Single layer NiFeCo element properties have also been investigated for comparison with the tunnel junctions. The results on tunnel junctions show the influence of size and aspect ratio of the patterned elements on magnetic properties. For the wider elements, domain formation and propagation is the dominant reversal mechanism and no asymmetry is observed between the antiparallel (AP) to parallel (P) and P–AP reversal measured as a function of aspect ratio. Single-domain reversal is the main process for narrower elements and there is an asymmetry in reversal field between the AP–P and P–AP reversals as a function of aspect ratio. Many energy terms (such as Néel coupling, stray field coupling, and the internal demagnetizing field) need to be taken into account to explain this behavior.Keywords
This publication has 13 references indexed in Scilit:
- Effects of two in-plane fields on the magnetization reversal mechanism in magnetic tunnel junction elementsJournal of Applied Physics, 2002
- High resolution structural and magnetic imagingJournal of Magnetism and Magnetic Materials, 2002
- Microstructural and magnetic characteristics of IrMn exchange-biased tunnel junctionsJournal of Magnetism and Magnetic Materials, 2001
- Néel “orange-peel” coupling in magnetic tunneling junction devicesApplied Physics Letters, 2000
- Switching of nanoscale magnetic elementsApplied Physics Letters, 1999
- Giant magnetoresistance properties of patterned IrMn exchange biased spin valvesJournal of Applied Physics, 1999
- Lorentz microscopy of small magnetic structures (invited)Journal of Applied Physics, 1999
- Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)Journal of Applied Physics, 1999
- Magnetization switching behavior in nanostructured NiFe/Co/Cu/Co spin-valveIEEE Transactions on Magnetics, 1998
- Magnetostatic effects in giant magnetoresistive spin-valve devicesApplied Physics Letters, 1996