Interaction corrections at intermediate temperatures: Longitudinal conductivity and kinetic equation
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- 1 November 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 64 (21), 214204
- https://doi.org/10.1103/physrevb.64.214204
Abstract
It is well known that electron-electron interaction in two-dimensional disordered systems leads to logarithmically divergent Altshuler-Aronov corrections to conductivity at low temperatures is the elastic mean-free time). This paper is devoted to the fate of such corrections at intermediate temperatures We show that in this (ballistic) regime the temperature dependence of conductivity is still governed by the same physical processes as the Altshuler-Aronov corrections—electron scattering by Friedel oscillations. However, in this regime the correction is linear in temperature; the value and even the sign of the slope depends on the strength of electron-electron interaction. (This sign change may be relevant for the “metal-insulator” transition observed recently.) We show that the slope is directly related to the renormalization of the spin susceptibility and grows as the system approaches the ferromagnetic Stoner instability. Also, we obtain the temperature dependence of the conductivity in the cross-over region between the diffusive and ballistic regimes. Finally, we derive the quantum kinetic equation, which describes electron transport for arbitrary value of
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This publication has 23 references indexed in Scilit:
- Charged Impurity-Scattering-Limited Low-Temperature Resistivity of Low-Density Silicon Inversion LayersPhysical Review Letters, 1999
- Metallic phase and metal-insulator transition in two-dimensional electronic systemsPhysical Review B, 1998
- Temperature dependence of the conductivity for the two-dimensional electron gas: Analytical results for low temperaturesPhysical Review B, 1986
- Self-consistent treatment of screening and Coulomb scattering in silicon inversion layers at low temperaturesSolid-State Electronics, 1985
- Weak localization and coulomb interaction in disordered systemsZeitschrift für Physik B Condensed Matter, 1984
- Spin fluctuations in disordered interacting electronsPhysical Review B, 1984
- Interaction-driven metal-insulator transitions in disordered fermion systemsPhysical Review B, 1984
- Weak localization in thin filmsPhysics Reports, 1984
- Calculated Temperature Dependence of Mobility in Silicon Inversion LayersPhysical Review Letters, 1980
- Temperature-Dependent Resistivities in Silicon Inversion Layers at Low TemperaturesPhysical Review Letters, 1980