Germanium and Silicon Disulfides: Structure and Synthesis
- 30 July 1965
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 149 (3683), 535-537
- https://doi.org/10.1126/science.149.3683.535
Abstract
Crystal structures of the tetragonal forms of germanium and silicon disulfide are similar and consist of (SiS4)4- and (GeS4)4- tetrahedra which share vertices to form three-dimensional networks. These tetragonal materials, synthesized at high pressure and temperature, are different from the previously known germanium and silicon disulfides.Keywords
This publication has 5 references indexed in Scilit:
- High-Pressure Single-Crystal Studies of Ice VIScience, 1965
- Reinvestigation of the structure of low cristobaliteZeitschrift für Kristallographie, 1965
- High Pressure Synthesis of New Silicon SulfidesInorganic Chemistry, 1965
- High-pressure region of the silica isotypesZeitschrift für Kristallographie, 1959
- The Crystal Structure of Germanium DisulphideThe Journal of Chemical Physics, 1936