800 MHz single-photon detection at 1550-nm using an InGaAs/InP avalanche photodiode operated with a sine wave gating

Abstract

Single-photon detection at 1550-nm with a high repetition rate was realized using an InGaAs/InP avalanche photodiode operated with a sine wave gating. Removing the AC noise due to the transferred gate signal using band elimination filters, we have discriminated the avalanche signal which is much smaller than that in the conventional gating, which results in the suppression of the afterpulsing. At the repetition frequency of 800MHz, the overall afterpulsing probability was 6.0% with the detection efficiency of 8.5%and the dark count probability of 9.2×10^-6.