Observation of semiconductor-semimetal transition in InAs-GaSb superlattices
- 15 December 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (12), 939-942
- https://doi.org/10.1063/1.91013
Abstract
The semiconductor‐semimetal transition in InAs‐GaSb superlattices is observed at a layer thickness in the vicinity of 100 Å. The transition manifests itself in an increase in the measured carrier concentration as a result of electron transfer from GaSb to InAs when ground subbands of electrons and heavy holes cross each other. Shubnikov‐de Haas measurements confirm the carrier enhancement in the semimetallic state.Keywords
This publication has 11 references indexed in Scilit:
- Optical absorption of In1−xGaxAsGaSb1−yAsy superlatticesSolid State Communications, 1978
- InAs-GaSb superlattice energy structure and its semiconductor-semimetal transitionPhysical Review B, 1978
- Tight-binding study of the electronic structure of the InAs–GaSb (001) superlatticeJournal of Vacuum Science and Technology, 1978
- Abstract: Superfine heterostructures of In1−xGaxAs and GaSb1−YAsYJournal of Vacuum Science and Technology, 1978
- Two-dimensional electronic structure in InAs-GaSb superlatticesSolid State Communications, 1978
- In1−xGaxAs-GaSb1−yAsy heterojunctions by molecular beam epitaxyApplied Physics Letters, 1977
- Shubnikov—de Haas Oscillations in a Semiconductor SuperlatticePhysical Review Letters, 1977
- A new semiconductor superlatticeApplied Physics Letters, 1977
- Semiconductor superfine structures by computer-controlled molecular beam epitaxyThin Solid Films, 1976
- Effects of a Tilted Magnetic Field on a Two-Dimensional Electron GasPhysical Review B, 1968