High-Quality Ultralong Bi2S3 Nanowires: Structure, Growth, and Properties

Abstract

A simple one-step hydrothermal method for large-scale synthesis of ultralong single-crystalline Bi₂S₃ nanowires was reported, and the nanowires were comprehensively characterized. The diameters of the nanowires are about 60 nm, and their lengths range from tens of microns to several millimeters. The structure of the nanowires was determined to be of the orthorhombic phase, the growth direction was along [001], and the growth mechanism was investigated based on extensive high-resolution transmission electron microscopy observations. Optical absorption experiments revealed that the Bi₂S₃ nanowires are narrow-band semiconductors with a band gap E_g ≈ 1.33 eV. Electrical transport measurements on individual nanowires gave a resistivity of about 1.2 Ω cm and an emission current of 3.5 μA at a bias field of 35 V/μm. This current corresponds to a current density of about 10⁵ A/cm², which makes the Bi₂S₃ nanowire a potential candidate for applications in field-emission electronic devices.