Ohmic Contacts to ZnSe-Based Materials

Abstract

The formation of ohmic contacts to n- and p-type ZnSe is reviewed. The mechanisms for forming reasonable low-resistance ohmic contacts to n-ZnSe are well understood. This results from the fact that the Fermi energy level of ZnSe is unpinned and metals with sufficiently large work functions can make contact to n-type material. However, the situation is reversed for p-ZnSe where a large band gap and large electron affinity make it impossible to find metals with sufficiently large work functions to create an ohmic contact. Instead, the use of HgSe to form low barrier height Schottky contacts and of ZnSe/ZnTe multiple quantum wells (MQWs) to form ohmic contacts is reviewed. Although the MQWs can be used to form ohmic contacts to p-ZnSe, they degrade at high temperatures and high current densities. This is reviewed and shown to be a serious problem for applications to laser diodes.