Effect of Dislocations on the Minority Carrier Lifetime in Semiconductors
- 15 February 1956
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 101 (4), 1285-1291
- https://doi.org/10.1103/physrev.101.1285
Abstract
The density of random dislocations in germanium and silicon crystals has been measured by means of x-ray rocking curves and by etch pit counting. Data obtained by the two methods are in good agreement, and dislocation densities in the range -/ were found. The minority carrier lifetime was shown to vary with the dislocation density, and the results could be expressed in terms of a recombination efficiency per unit length of dislocation line, (where , ). was found to decrease with increasing resistivity of germanium and was higher for silicon than for germanium of comparable purity.
Keywords
This publication has 8 references indexed in Scilit:
- Measurement of Carrier Lifetimes in Germanium and SiliconJournal of Applied Physics, 1955
- Effect of dislocations on minority carrier lifetime in germaniumActa Metallurgica, 1954
- Dislocations in Plastically Deformed GermaniumPhysical Review B, 1954
- The estimation of dislocation densities in metals from X-ray dataActa Metallurgica, 1953
- Observations of Dislocations in Lineage Boundaries in GermaniumPhysical Review B, 1953
- Temporary Traps in Silicon and GermaniumPhysical Review B, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- XXXII. On the measurement of particle size by the X-ray methodThe London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, 1941