Removal of Shallow and Deep Scratches and Pits from Polished Copper Films
- 1 January 2003
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 6 (10), G126-G129
- https://doi.org/10.1149/1.1602333
Abstract
Chemical mechanical polishing of scratched and pitted copper films was performed with a chemical solution containing 3 wt % hydrogen peroxide 2 mM benzotriazole, and a complexing agent, at pH 4, in the presence and absence of 0.1 wt % of ∼10 to 20 nm colloidal silica particles. While the chemical solution alone was able to clear shallow scratches and pits, some as deep as 40 nm, the addition of 0.1 wt % of colloidal silica allowed the planarization of scratches as deep as ∼320 nm and pits as deep as 350 nm, all after a 60 s polish time. © 2003 The Electrochemical Society. All rights reserved.Keywords
This publication has 14 references indexed in Scilit:
- Fundamentals of Slurry Design for CMP of Metal and Dielectric MaterialsMRS Bulletin, 2002
- Effect of Particle Size of Chemical Mechanical Polishing Slurries for Enhanced Polishing with Minimal DefectsJournal of the Electrochemical Society, 2000
- Mechanism of Cu removal during CMP in H2O2-glycine based slurriesMRS Proceedings, 1999
- Chemical-mechanical polishing of copper with oxide and polymer interlevel dielectricsThin Solid Films, 1995
- Mechanisms of copper removal during chemical mechanical polishingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Chemical mechanical polishing of copper for multilevel metallizationApplied Surface Science, 1995
- The evolution of interconnection technology at IBMIBM Journal of Research and Development, 1995
- Contact and via structures with copper interconnects fabricated using dual Damascene technologyIEEE Electron Device Letters, 1994
- Chemical‐Mechanical Polishing for Fabricating Patterned W Metal Features as Chip InterconnectsJournal of the Electrochemical Society, 1991
- Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit InterconnectionsJournal of the Electrochemical Society, 1991