Pressure sensitivity in anisotropically etched thin-diaphragm pressure sensors
- 1 December 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 26 (12), 1887-1896
- https://doi.org/10.1109/t-ed.1979.19792
Abstract
In this paper the differential equations governing thin, square-diaphragm silicon pressure sensors are developed and solved using finite-difference numerical methods. Diaphragm deflection and stress patterns are presented in a normalized form applicable to diaphragms of arbitrary thickness and size. For 1-mm210-µm-thick diaphragms inKeywords
This publication has 12 references indexed in Scilit:
- MicroelectronicsScientific American, 1977
- Difference operator for variable stiffness platesInternational Journal for Numerical Methods in Engineering, 1975
- A Microminiature Solid-State Capacitive Blood Pressure Transducer with Improved SensitivityIEEE Transactions on Biomedical Engineering, 1973
- An IC Piezoresistive Pressure Sensor for Biomedical InstrumentationIEEE Transactions on Biomedical Engineering, 1973
- An IC piezoresistive pressure sensor for biomedical instrumentationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1971
- Semiconductor mechanical sensorsIEEE Transactions on Electron Devices, 1969
- Effect of Mechanical Stress on p—n Junction Device Characteristics. II. Generation—Recombination CurrentJournal of Applied Physics, 1966
- Piezoresistive Properties of Silicon Diffused LayersJournal of Applied Physics, 1963
- Silicon Diffused-Element Piezoresistive DiaphragmsJournal of Applied Physics, 1962
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955