Electrical and thermal properties of neutron-transmutation-doped Ge at 20 mK
- 15 February 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (6), 3761-3768
- https://doi.org/10.1103/physrevb.41.3761
Abstract
We report on hot-electron effects in neutron-transmutation-doped Ge (NTD Ge) near 20 mK. Both static and dynamic electrical properties were measured and compared with a model including both variable-range-hopping conduction and hot-electron effects.Keywords
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