Impact of variability on the performance of SOI Schottky barrier MOSFETs
- 30 April 2009
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 53 (4), 418-423
- https://doi.org/10.1016/j.sse.2008.09.019
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Investigation on the barrier height and inhomogeneity of nickel silicide SchottkyApplied Surface Science, 2006
- Schottky-barrier height tuning using dopant segregation in Schottky-barrier MOSFETs on fully-depleted SOIMRS Proceedings, 2006
- Integration of PtSi-Based Schottky-Barrier p-MOSFETs With a Midgap Tungsten GateIEEE Transactions on Electron Devices, 2005
- Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodesSolid-State Electronics, 2005
- The barrier-height inhomogeneity in identically prepared H-terminated Ti/p-Si Schottky barrier diodesSemiconductor Science and Technology, 2004
- Quantum simulations of an ultrashort channel single-gated n-MOSFET on SOIIEEE Transactions on Electron Devices, 2002
- Ultrathin 600°C Wet Thermal Silicon DioxideElectrochemical and Solid-State Letters, 1999
- Current transport in
Ti GaAs Solid-State Electronics, 1995 - Scaling the Si MOSFET: from bulk to SOI to bulkIEEE Transactions on Electron Devices, 1992
- The E(k) Relation for a Two‐Band Scheme of Semiconductors and the Application to the Metal‐Semiconductor ContactPhysica Status Solidi (b), 1972