MOS area sensor: Part I—Design consideration and performance of an n-p-n structure 484 × 384 element color MOS imager
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (8), 1676-1681
- https://doi.org/10.1109/t-ed.1980.20087
Abstract
The design consideration and performance of an n-p-n structure 484 × 384 element MOS imager is described. The imager has a photodiode array and scanners separately integrated on different p wells. The horizontal scanner, consisting of bootstrapping type noninverting circuits, features high speed and low noise. The maximum scan rate of the scanner is ∼15 MHz. The vertical scanner, consisting of inverting circuits, has a wide dynamic operating range. It can operate stably under an intense illumination of ∼ 1500 1x. Analysis of the MOS switch with a photodiode is also carried out. The 484 × 384 imager has shown excellent performances: signal to fixed-pattern-noise ratio of 54 dB, horizontal resolution of 260 TV lines, vertical resolution of 350 TV lines, well-balanced spectral response, and antiblooming.Keywords
This publication has 3 references indexed in Scilit:
- An NPN structure 484×384 MOS imager for a single-chip color cameraPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- A Single-Chip Color Television CameraThe Journal of the Institute of Television Engineers of Japan, 1979
- Color imaging system using a single CCD area arrayIEEE Transactions on Electron Devices, 1978