Low temperature wafer bonding for thin silicon film transfer
- 1 February 2004
- journal article
- Published by Elsevier BV in Sensors and Actuators A: Physical
- Vol. 110 (1-3), 401-406
- https://doi.org/10.1016/j.sna.2003.09.011
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Low-temperature wafer-level transfer bondingJournal of Microelectromechanical Systems, 2001
- Plasma assisted room temperature bonding for MSTSensors and Actuators A: Physical, 2001
- Low temperature full wafer adhesive bonding of structured wafersSensors and Actuators A: Physical, 2001
- Mechanically induced Si layer transfer in hydrogen-implanted Si wafersApplied Physics Letters, 2000
- Study of low-temperature direct bonding of (111) and (100) silicon wafers under various ambient and surface conditionsSensors and Actuators A: Physical, 2000
- The Buried Oxide Properties in Oxygen Plasma-Enhanced Low-Temperature Wafer BondingJournal of the Electrochemical Society, 2000
- Oxidation and Induced Damage in Oxygen Plasma In Situ Wafer BondingJournal of the Electrochemical Society, 2000
- Wafer-to-wafer bonding for microstructure formationProceedings of the IEEE, 1998
- A solid-state pressure-sensing microsystem for biomedical applicationsSensors and Actuators A: Physical, 1997
- Bonding of silicon wafers for silicon-on-insulatorJournal of Applied Physics, 1988