On the discrimination between bulk and surface traps in AlGaN/GaN HEMTs from trapping characteristics
- 15 November 2011
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 209 (2), 386-389
- https://doi.org/10.1002/pssa.201127398
Abstract
Drain current trapping characteristics is shown to be able to distinguish between bulk and surface traps. This is illustrated on stressed and unstressed AlGaN/GaN HEMTs with different surface oxygen content. A trapping characteristic with positive amplitude is shown to be related to surface traps located in the transistor access region close to the gate edge. In contrast, current trapping characteristic with negative amplitude is related to emission from AlGaN bulk traps located underneath the gate. This method enables easy distinguishing between bulk and surface traps generated during reliability testing.Keywords
Funding Information
- ONR and ONR Global (N00014-08-1-1091)
This publication has 14 references indexed in Scilit:
- The role of surface barrier oxidation on AlGaN/GaN HEMTs reliabilityMicroelectronics Reliability, 2012
- N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire SubstrateIEEE Electron Device Letters, 2011
- AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free TechnologyIEEE Electron Device Letters, 2011
- Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulationsMicroelectronics Reliability, 2010
- Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical StressIEEE Electron Device Letters, 2010
- AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection DiodeIEEE Electron Device Letters, 2009
- Evaluation of GaN HEMT degradation by means of pulsed I–V, leakage and DLTS measurementsElectronics Letters, 2009
- Current collapse in AlGaN/GaN transistors studied using time-resolved Raman thermographyApplied Physics Letters, 2008
- High-quality oxide/nitride/oxide gate insulator for GaN MIS structuresIEEE Transactions on Electron Devices, 2001
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETsIEEE Transactions on Electron Devices, 2001