Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns
- 1 July 2008
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 47 (7R)
- https://doi.org/10.1143/jjap.47.5330
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisksPhysica Status Solidi (b), 2007
- Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxyApplied Physics Letters, 2007
- Epitaxial overgrowth of GaN nanocolumnsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2007
- Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxyJournal of Crystal Growth, 2007
- High‐quality InN grown on KOH wet etched N‐polar InN template by RF‐MBEPhysica Status Solidi (a), 2006
- Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBEMRS Proceedings, 2006
- Radio frequency-molecular beam epitaxial growth of InN epitaxial films on (0001) sapphire and their propertiesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004
- AlGaN Nanocolumns and AlGaN/GaN/AlGaN Nanostructures Grown by Molecular Beam EpitaxyPhysica Status Solidi (b), 2002