An extended model for carbon nanotube field-effect transistors
- 23 December 2004
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A Numerical Study of Scaling Issues for Schottky-Barrier Carbon Nanotube TransistorsIEEE Transactions on Electron Devices, 2004
- Field-Modulated Carrier Transport in Carbon Nanotube TransistorsPhysical Review Letters, 2002
- Carbon Nanotubes as Schottky Barrier TransistorsPhysical Review Letters, 2002
- Switching behavior of semiconducting carbon nanotubes under an external electric fieldApplied Physics Letters, 2001
- Short-channel effect in fully depleted SOI MOSFETsIEEE Transactions on Electron Devices, 1989
- The E(k) Relation for a Two‐Band Scheme of Semiconductors and the Application to the Metal‐Semiconductor ContactPhysica Status Solidi (b), 1972