Near-Infrared Photoluminescence and Electroluminescence of Neodymium(III), Erbium(III), and Ytterbium(III) Complexes
- 1 January 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (1R), 350
- https://doi.org/10.1143/jjap.40.350
Abstract
Tris(dibenzoylmethanato)(monobathophenanthroline)lanthanide(III) complex [Ln(DBM)3 bath (Ln: Nd, Er and Yb)] both in solutions and thin films at room temperature showed narrow band photoluminescence (PL) due to the f–f transitions in the near-IR region: 890, 1070 and 1350 nm for Nd(III), 980 and 1540 nm for Er(III), and 985 nm for Yb(III). The PL efficiencies in solution were determined [φPL=3.3×10-3 for Nd(III), 7.0×10-5 for Er(III), and 1.4×10-2 for Yb(III)]. Organic electroluminescent (EL) devices having the structure of glass substrate/indium-tin oxide/N,N ′-diphenyl-N,N ′-di(m-tolyl)benzidine/Ln(DBM)3bath(Ln: Nd, Er and Yb)/bathocuproine/Mg:Ag/Ag were fabricated, giving the EL bands around 900–1600 nm at room temperature. The external near-IR EL efficiencies at low current density were estimated by comparing with that of the Eu(III) device having the same structure. The saturation of near-IR EL intensity observed at the high current density suggested that the near-IR EL should suffer the T–T annihilation.This publication has 59 references indexed in Scilit:
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