The following topics were dealt with: process variability and yield; reliability; high voltage devices; channel engineered devices; advanced analogue and radiofrequency devices; floating-gate and charge-trap NAND memories; SRAM and alternative nonvolatile memories; applied modelling techniques; process stability; fully depleted devices; carbon nanotubes; characterisation of advanced front-end materials and devices; device modelling; high frequency circuit components; optical detectors; transistor engineering; sensors and micromechanical devices; silicon devices; source and drain engineering.